FGB20N60SFD IGBT Transistor

The FGB20N60SFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGB20N60SFD transistor as follows.

FGB20N60SFD Transistor Specification

Transistor Code		FGB20N60SFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263(D2PAK)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	20.0A

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