KP810A IGBT Transistor

The KP810A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KP810A transistor as follows.

KP810A Transistor Specification

Transistor Code		KP810A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO218
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	1500V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		200

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