T0900EB45A IGBT Transistor

The T0900EB45A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0900EB45A transistor as follows.

T0900EB45A Transistor Specification

Transistor Code		T0900EB45A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	7100W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.05V
Collector Current (Maximum)	IC	900A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3400

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