MGW12N120 IGBT Transistor

The MGW12N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW12N120 transistor as follows.

MGW12N120 Transistor Specification

Transistor Code		MGW12N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	123W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.51V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		930pF
Rise Time		74

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