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MMG200DR120UZA IGBT Transistor

The MMG200DR120UZA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG200DR120UZA transistor as follows.

Circuit diagram symbol of the MMG200DR120UZA transistor

MMG200DR120UZA Transistor Specification

Transistor Code MMG200DR120UZA
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1400W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1040
Rise Time 60

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