RJH60V1BDPE IGBT Transistor

The RJH60V1BDPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60V1BDPE transistor as follows.

RJH60V1BDPE Transistor Specification

Transistor Code		RJH60V1BDPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	52W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		27
Rise Time		12

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