RGTH40TS65D IGBT Transistor

The RGTH40TS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGTH40TS65D transistor as follows.

RGTH40TS65D Transistor Specification

Transistor Code		RGTH40TS65D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	72W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		47
Rise Time		25

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