IXGN82N120B3H1 IGBT Transistor

The IXGN82N120B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN82N120B3H1 transistor as follows.

IXGN82N120B3H1 Transistor Specification

Transistor Code		IXGN82N120B3H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	145A
Rise Time		100

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