HGT1S12N60C3 IGBT Transistor

The HGT1S12N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S12N60C3 transistor as follows.

HGT1S12N60C3 Transistor Specification

Transistor Code		HGT1S12N60C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262AB
Collector Power Dissipation (Maximum)	Pc	104W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		14

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