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SKM150GAL12V IGBT Transistor

The SKM150GAL12V is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM150GAL12V transistor as follows.

Circuit diagram symbol of the SKM150GAL12V transistor

SKM150GAL12V Transistor Specification

Transistor Code SKM150GAL12V
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.75V
Collector Current (Maximum) IC 231A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 890
Rise Time 32

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