SNG30610 IGBT Transistor

The SNG30610 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SNG30610 transistor as follows.

SNG30610 Transistor Specification

Transistor Code		SNG30610
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO257
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		600

UXPython is not the creator or an official representative of the SNG30610 IGBT transistor. You can download the official SNG30610 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXER35N120D1 IGBT Transistor IXGP42N30C3 IGBT Transistor AP20GT60W IGBT Transistor MMG400KR060U IGBT Transistor SII100N06 IGBT Transistor SKM150GB12V IGBT Transistor IXXK110N65B4H1 IGBT Transistor IXGN400N30A3 IGBT Transistor APT13GP120BG IGBT Transistor NGTB40N120IHL IGBT Transistor TA49117 IGBT Transistor IXGK80N60AU1 IGBT Transistor APTGF150DU120T IGBT Transistor IRGP4063D1 IGBT Transistor FF150R12KT3G IGBT Transistor IXSK50N60BD1 IGBT Transistor APT65GP60B2G IGBT Transistor FGA50N100BNTD IGBT Transistor FD800R33KF2C-K IGBT Transistor GT30F124 IGBT Transistor