IGC109T120T6RH IGBT Transistor

The IGC109T120T6RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC109T120T6RH transistor as follows.

IGC109T120T6RH Transistor Specification

Transistor Code		IGC109T120T6RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	110A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		440
Rise Time		175

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