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IGC109T120T6RH IGBT Transistor

The IGC109T120T6RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC109T120T6RH transistor as follows.

Circuit diagram symbol of the IGC109T120T6RH transistor

IGC109T120T6RH Transistor Specification

Transistor Code IGC109T120T6RH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 110A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 440
Rise Time 175

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