IRGB4715D IGBT Transistor

The IRGB4715D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGB4715D transistor as follows.

IRGB4715D Transistor Specification

Transistor Code		IRGB4715D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		50
Rise Time		20

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