IRGSL10B60KD IGBT Transistor

The IRGSL10B60KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL10B60KD transistor as follows.

IRGSL10B60KD Transistor Specification

Transistor Code		IRGSL10B60KD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO262
Collector Power Dissipation (Maximum)	Pc	104W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	22A

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