IXSH50N60B IGBT Transistor

The IXSH50N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH50N60B transistor as follows.

IXSH50N60B Transistor Specification

Transistor Code		IXSH50N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO274
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		3850pF
Rise Time		70

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