IXYN100N65B3D1 IGBT Transistor

The IXYN100N65B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYN100N65B3D1 transistor as follows.

IXYN100N65B3D1 Transistor Specification

Transistor Code		IXYN100N65B3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	185A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		470
Rise Time		37

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