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IXSH20N60U1 IGBT Transistor

The IXSH20N60U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH20N60U1 transistor as follows.

Circuit diagram symbol of the IXSH20N60U1 transistor

IXSH20N60U1 Transistor Specification

Transistor Code IXSH20N60U1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1800pF
Rise Time 100

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