IXYH30N170C IGBT Transistor

The IXYH30N170C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYH30N170C transistor as follows.

IXYH30N170C Transistor Specification

Transistor Code		IXYH30N170C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	520W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4.8V
Collector Current (Maximum)	IC	110A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		124
Rise Time		13

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