IXA4IF1200TC IGBT Transistor

The IXA4IF1200TC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA4IF1200TC transistor as follows.

IXA4IF1200TC Transistor Specification

Transistor Code		IXA4IF1200TC
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		X4TAUF BACKSIDE
Collector Power Dissipation (Maximum)	Pc	45W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	9A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		40

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