IXGT25N250HV IGBT Transistor

The IXGT25N250HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT25N250HV transistor as follows.

IXGT25N250HV Transistor Specification

Transistor Code		IXGT25N250HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268-2L
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		75
Rise Time		233

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