SIGC04T60 IGBT Transistor

The SIGC04T60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SIGC04T60 transistor as follows.

SIGC04T60 Transistor Specification

Transistor Code		SIGC04T60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		28
Rise Time		13

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