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IXGH28N30 IGBT Transistor

The IXGH28N30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH28N30 transistor as follows.

Circuit diagram symbol of the IXGH28N30 transistor

IXGH28N30 Transistor Specification

Transistor Code IXGH28N30
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 300V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1500pF
Rise Time 15

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