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IXGP12N100U1 IGBT Transistor

The IXGP12N100U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP12N100U1 transistor as follows.

Circuit diagram symbol of the IXGP12N100U1 transistor

IXGP12N100U1 Transistor Specification

Transistor Code IXGP12N100U1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 3.5

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