APTGF165DA60D1 IGBT Transistor

The APTGF165DA60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF165DA60D1 transistor as follows.

APTGF165DA60D1 Transistor Specification

Transistor Code		APTGF165DA60D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	730W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	230A
Operating Junction Temperature (Maximum)		150 oC

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