MPMD200B120RH IGBT Transistor

The MPMD200B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMD200B120RH transistor as follows.

MPMD200B120RH Transistor Specification

Transistor Code		MPMD200B120RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM3
Collector Power Dissipation (Maximum)	Pc	1136W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	275A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		977
Rise Time		90

UXPython is not the creator or an official representative of the MPMD200B120RH IGBT transistor. You can download the official MPMD200B120RH IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IGC76T65T8RM IGBT Transistor STGP10H60DF IGBT Transistor IXGH24N170AH1 IGBT Transistor TA49121 IGBT Transistor IHW30N100T IGBT Transistor GA300TD60U IGBT Transistor IRGP4063D IGBT Transistor 20MT120UFP IGBT Transistor APTGF150A120T IGBT Transistor IRG7SC12F IGBT Transistor IKZ75N65EL5 IGBT Transistor IXSP16N60 IGBT Transistor FGH40N60SFD IGBT Transistor SKM400GAR124D IGBT Transistor MMG300D060B6N IGBT Transistor HGTP10N50E1 IGBT Transistor APTGF330A60D3 IGBT Transistor NGTB25N120FL IGBT Transistor SGW6N60UF IGBT Transistor BSM100GAR120DN2 IGBT Transistor