MPMD200B120RH IGBT Transistor

The MPMD200B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMD200B120RH transistor as follows.

MPMD200B120RH Transistor Specification

Transistor Code		MPMD200B120RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM3
Collector Power Dissipation (Maximum)	Pc	1136W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	275A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		977
Rise Time		90

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