IXGC16N60B2D1 IGBT Transistor

The IXGC16N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGC16N60B2D1 transistor as follows.

IXGC16N60B2D1 Transistor Specification

Transistor Code		IXGC16N60B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS220
Collector Power Dissipation (Maximum)	Pc	63W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	28A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		65
Rise Time		15

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