T0500NB25E IGBT Transistor

The T0500NB25E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0500NB25E transistor as follows.

T0500NB25E Transistor Specification

Transistor Code		T0500NB25E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	2600W
Collector-Emitter Voltage (Maximum)	VCE	1250V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.05V
Collector Current (Maximum)	IC	500A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		2200

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