RJH60F6DPK IGBT Transistor

The RJH60F6DPK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60F6DPK transistor as follows.

RJH60F6DPK Transistor Specification

Transistor Code		RJH60F6DPK
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.35V
Collector Current (Maximum)	IC	85A
Rise Time		74

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