APTGS10X120BTP2 IGBT Transistor

The APTGS10X120BTP2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGS10X120BTP2 transistor as follows.

APTGS10X120BTP2 Transistor Specification

Transistor Code		APTGS10X120BTP2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC

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