KP730A IGBT Transistor

The KP730A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KP730A transistor as follows.

KP730A Transistor Specification

Transistor Code		KP730A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO218
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		2400pF
Rise Time		480

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