IXSN35N100U1 IGBT Transistor

The IXSN35N100U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSN35N100U1 transistor as follows.

IXSN35N100U1 Transistor Specification

Transistor Code		IXSN35N100U1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector Current (Maximum)	IC	34A
Operating Junction Temperature (Maximum)		150 oC

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