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IXA17IF1200HJ IGBT Transistor

The IXA17IF1200HJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA17IF1200HJ transistor as follows.

Circuit diagram symbol of the IXA17IF1200HJ transistor

IXA17IF1200HJ Transistor Specification

Transistor Code IXA17IF1200HJ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOLATED 2(C) (G) 1
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 28A
Rise Time 100

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