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VS-GT50TP120N IGBT Transistor

The VS-GT50TP120N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GT50TP120N transistor as follows.

Circuit diagram symbol of the VS-GT50TP120N transistor

VS-GT50TP120N Transistor Specification

Transistor Code VS-GT50TP120N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package INT-A-PAK
Collector Power Dissipation (Maximum) Pc 405W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 230
Rise Time 84

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