NGB8207N IGBT Transistor

The NGB8207N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8207N transistor as follows.

NGB8207N Transistor Specification

Transistor Code		NGB8207N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK-3
Collector Power Dissipation (Maximum)	Pc	165W
Collector-Emitter Voltage (Maximum)	VCE	365V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	20A

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