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TGD30N40P IGBT Transistor

The TGD30N40P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TGD30N40P transistor as follows.

Circuit diagram symbol of the TGD30N40P transistor

TGD30N40P Transistor Specification

Transistor Code TGD30N40P
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 56.8W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.4V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 50
Rise Time 105

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