IHW30N110R3 IGBT Transistor

The IHW30N110R3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW30N110R3 transistor as follows.

IHW30N110R3 Transistor Specification

Transistor Code		IHW30N110R3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	333W
Collector-Emitter Voltage (Maximum)	VCE	1100V
Collector-Emitter Saturation Voltage	VCE(on)	1.55V
Collector Current (Maximum)	IC	60A

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