IGW30N100T IGBT Transistor

The IGW30N100T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGW30N100T transistor as follows.

IGW30N100T Transistor Specification

Transistor Code		IGW30N100T
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	412W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	1.55V
Collector Current (Maximum)	IC	60A

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