IXDP35N60B IGBT Transistor

The IXDP35N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDP35N60B transistor as follows.

IXDP35N60B Transistor Specification

Transistor Code		IXDP35N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	60A
Rise Time		70

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