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MMG400D060B6N IGBT Transistor

The MMG400D060B6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG400D060B6N transistor as follows.

Circuit diagram symbol of the MMG400D060B6N transistor

MMG400D060B6N Transistor Specification

Transistor Code MMG400D060B6N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1400W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1800
Rise Time 65

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