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IGC39T65T8M IGBT Transistor

The IGC39T65T8M is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC39T65T8M transistor as follows.

Circuit diagram symbol of the IGC39T65T8M transistor

IGC39T65T8M Transistor Specification

Transistor Code IGC39T65T8M
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.82V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC

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