HYG75P120D1S IGBT Transistor

The HYG75P120D1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HYG75P120D1S transistor as follows.

HYG75P120D1S Transistor Specification

Transistor Code		HYG75P120D1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	105A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		60

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