HGT1S20N35G3VLS IGBT Transistor

The HGT1S20N35G3VLS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S20N35G3VLS transistor as follows.

HGT1S20N35G3VLS Transistor Specification

Transistor Code		HGT1S20N35G3VLS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	375V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		30000

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