T0570VB25G IGBT Transistor

The T0570VB25G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0570VB25G transistor as follows.

T0570VB25G Transistor Specification

Transistor Code		T0570VB25G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	2960W
Collector-Emitter Voltage (Maximum)	VCE	1250V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	570A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		2500

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