DM2G50SH6N IGBT Transistor

The DM2G50SH6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G50SH6N transistor as follows.

DM2G50SH6N Transistor Specification

Transistor Code		DM2G50SH6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-1
Collector Power Dissipation (Maximum)	Pc	275W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		450
Rise Time		30

UXPython is not the creator or an official representative of the DM2G50SH6N IGBT transistor. You can download the official DM2G50SH6N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXA20PG1200DHGLB IGBT Transistor IXGH40N30 IGBT Transistor HGT1S5N120BNDS IGBT Transistor STGW20NB60HD IGBT Transistor SMC7G10US120 IGBT Transistor APT40GP90JDF2 IGBT Transistor APT54GA60SD30 IGBT Transistor IXGX35N120CD1 IGBT Transistor BSM100GB120DN2K IGBT Transistor SKM200GAL123D IGBT Transistor IXGK60N60 IGBT Transistor STGF7NB60SL IGBT Transistor MGP20N35CL IGBT Transistor APT75GT120JU3 IGBT Transistor NGTG40N120FL2WG IGBT Transistor SGH13N60UFD IGBT Transistor 27N60C3DR IGBT Transistor IRGR2B60KD IGBT Transistor IKB10N60T IGBT Transistor SGH30N60RUF IGBT Transistor