GT30J324 IGBT Transistor

The GT30J324 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30J324 transistor as follows.

GT30J324 Transistor Specification

Transistor Code		GT30J324
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16C1C
Collector Power Dissipation (Maximum)	Pc	170W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC

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