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IXGT20N100 IGBT Transistor

The IXGT20N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT20N100 transistor as follows.

Circuit diagram symbol of the IXGT20N100 transistor

IXGT20N100 Transistor Specification

Transistor Code IXGT20N100
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 3

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