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RCM10N40 IGBT Transistor

The RCM10N40 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RCM10N40 transistor as follows.

Circuit diagram symbol of the RCM10N40 transistor

RCM10N40 Transistor Specification

Transistor Code RCM10N40
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO204
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 400V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 800pF
Rise Time 100

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