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G10N40 IGBT Transistor

The G10N40 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G10N40 transistor as follows.

Circuit diagram symbol of the G10N40 transistor

G10N40 Transistor Specification

Transistor Code G10N40
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252AA
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 45

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