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FGA30N60LSD IGBT Transistor

The FGA30N60LSD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGA30N60LSD transistor as follows.

Circuit diagram symbol of the FGA30N60LSD transistor

FGA30N60LSD Transistor Specification

Transistor Code FGA30N60LSD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.1V
Collector Current (Maximum) IC 30.0A

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