HGT1S20N35G3VLS9A IGBT Transistor

The HGT1S20N35G3VLS9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S20N35G3VLS9A transistor as follows.

HGT1S20N35G3VLS9A Transistor Specification

Transistor Code		HGT1S20N35G3VLS9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	375V
Gate-Emitter Voltage (Maximum)	VGE	10V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		30000

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